TPCC8093,L1Q

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Overview of TPCC8093,L1Q

Part NumberTPCC8093,L1Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 20V 21A 8TSON
Price for TPCC8093,L1Q

Specification of TPCC8093,L1Q

Status
Obsolete
Series
U-MOSVII
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
21A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
5.8mOhm @ 10.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 500A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
1860 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta), 30W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN

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