TPCC8105,L1Q(CM

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Overview of TPCC8105,L1Q(CM

Part NumberTPCC8105,L1Q(CM
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 30V 23A 8TSON
Price for TPCC8105,L1Q(CM

Specification of TPCC8105,L1Q(CM

Status
Active
Series
U-MOSVI
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
2V @ 500A
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Vgs (Max)
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 30W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-VDFN Exposed Pad

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