TPCF8A01(TE85L)

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Overview of TPCF8A01(TE85L)

Part NumberTPCF8A01(TE85L)
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 20V 3A VS-8
DatasheetsDownload TPCF8A01(TE85L) Datasheet PDFPDF Icon
Price for TPCF8A01(TE85L)

Specification of TPCF8A01(TE85L)

Status
Obsolete
Series
U-MOSIII
Package
Tape & Reel (TR)
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2V, 4.5V
Rds On (Max) @ Id, Vgs
49mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 200A
Gate Charge (Qg) (Max) @ Vgs
7.5 nC @ 5 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 10 V
FET Feature
Schottky Diode (Isolated)
Power Dissipation (Max)
330mW (Ta)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
VS-8 (2.9x1.5)
Package / Case
8-SMD, Flat Lead

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