TPD3215M

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Overview of TPD3215M

Part NumberTPD3215M
ManufacturerTransphorm
DescriptionGANFET 2N-CH 600V 70A MODULE
DatasheetsDownload TPD3215M Datasheet PDFPDF Icon
Price for TPD3215M

Specification of TPD3215M

Status
Obsolete
Package
Bulk
Supplier
Transphorm
Technology
GaNFET (Gallium Nitride)
Configuration
2 N-Channel (Half Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
600V
Current - Continuous Drain (Id) @ 25C
70A (Tc)
Rds On (Max) @ Id, Vgs
34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
2260pF @ 100V
Power - Max
470W
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
Module
Supplier Device Package
Module

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