TPH1R005PL,L1Q

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Overview of TPH1R005PL,L1Q

Part NumberTPH1R005PL,L1Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 45V 150A 8SOP
DatasheetsDownload TPH1R005PL,L1Q Datasheet PDFPDF Icon
Price for TPH1R005PL,L1Q

Specification of TPH1R005PL,L1Q

Status
Active
Series
U-MOSIX-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
45 V
Current - Continuous Drain (Id) @ 25C
150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.04mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
99 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
9600 pF @ 22.5 V
FET Feature
-
Power Dissipation (Max)
960mW (Ta), 170W (Tc)
Operating Temperature
175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5)
Package / Case
8-PowerVDFN

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