TPH4R50ANH1,LQ

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Overview of TPH4R50ANH1,LQ

Part NumberTPH4R50ANH1,LQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET 100V 4.5MOHM SOP-ADV(N)
Price for TPH4R50ANH1,LQ

Specification of TPH4R50ANH1,LQ

Status
Active
Series
U-MOSVIII-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
92A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 46A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
5200 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
800mW (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5.75)
Package / Case
8-PowerTDFN

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