TPS1120DR

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Overview of TPS1120DR

Part NumberTPS1120DR
ManufacturerTexas Instruments
DescriptionMOSFET 2P-CH 15V 1.17A 8-SOIC
DatasheetsDownload TPS1120DR Datasheet PDFPDF Icon
Price for TPS1120DR

Specification of TPS1120DR

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Texas Instruments
Technology
MOSFET (Metal Oxide)
Configuration
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
15V
Current - Continuous Drain (Id) @ 25C
1.17A
Rds On (Max) @ Id, Vgs
180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
5.45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
840mW
Operating Temperature
-40C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC

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