TQM150NB04DCR RLG

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Overview of TQM150NB04DCR RLG

Part NumberTQM150NB04DCR RLG
ManufacturerTaiwan Semiconductor
DescriptionAUTOMOTIVE 40V MOSFET, 15M, DUAL
DatasheetsDownload TQM150NB04DCR RLG Datasheet PDFPDF Icon
Price for TQM150NB04DCR RLG

Specification of TQM150NB04DCR RLG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
40V
Current - Continuous Drain (Id) @ 25C
9A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs
15mOhm @ 9A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1135pF @ 20V
Power - Max
2.4W (Ta), 48W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount, Wettable Flank
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFNU (5x6)

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