TRS16N65FB,S1Q

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Overview of TRS16N65FB,S1Q

Part NumberTRS16N65FB,S1Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionSIC SBD TO-247 V=650 IF=12A
Price for TRS16N65FB,S1Q

Specification of TRS16N65FB,S1Q

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
8A (DC)
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 A @ 650 V
Operating Temperature - Junction
175C
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247

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