TRS20N65FB,S1F(S

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Overview of TRS20N65FB,S1F(S

Part NumberTRS20N65FB,S1F(S
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionDODE SCHOTTKY 650V TO247
Price for TRS20N65FB,S1F(S

Specification of TRS20N65FB,S1F(S

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
Diode Configuration
1 Pair Common Cathode
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io) (per Diode)
10A (DC)
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 10 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
90 A @ 650 V
Operating Temperature - Junction
175C (Max)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247

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