TRS4A65F,S1Q

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Overview of TRS4A65F,S1Q

Part NumberTRS4A65F,S1Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionDIODE SIL CARBIDE 650V 4A TO220F
Price for TRS4A65F,S1Q

Specification of TRS4A65F,S1Q

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 A @ 650 V
Capacitance @ Vr, F
16pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2 Full Pack
Supplier Device Package
TO-220F-2L
Operating Temperature - Junction
175C (Max)

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