TRS4E65F,S1Q

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Overview of TRS4E65F,S1Q

Part NumberTRS4E65F,S1Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionDIODE SIL CARB 650V 4A TO220-2L
Price for TRS4E65F,S1Q

Specification of TRS4E65F,S1Q

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
4A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 4 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
20 A @ 650 V
Capacitance @ Vr, F
16pF @ 650V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220-2L
Operating Temperature - Junction
175C (Max)

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