TSM060N03PQ33 RGG

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Overview of TSM060N03PQ33 RGG

Part NumberTSM060N03PQ33 RGG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 30V 62A 8PDFN
DatasheetsDownload TSM060N03PQ33 RGG Datasheet PDFPDF Icon
Price for TSM060N03PQ33 RGG

Specification of TSM060N03PQ33 RGG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
62A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
25.4 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1342 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
40W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (3.1x3.1)
Package / Case
8-PowerWDFN

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