TSM080NB03CR

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Overview of TSM080NB03CR

Part NumberTSM080NB03CR
ManufacturerTaiwan Semiconductor
Description30V, 59A, SINGLE N-CHANNEL POWE
DatasheetsDownload TSM080NB03CR Datasheet PDFPDF Icon
Price for TSM080NB03CR

Specification of TSM080NB03CR

Status
Active
Package
Tape & Reel (TR)
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
14A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1097 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 55.6W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN

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