TSM130NB06LCR RLG

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Overview of TSM130NB06LCR RLG

Part NumberTSM130NB06LCR RLG
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 60V 10A/51A 8PDFN
DatasheetsDownload TSM130NB06LCR RLG Datasheet PDFPDF Icon
Price for TSM130NB06LCR RLG

Specification of TSM130NB06LCR RLG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
10A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2175 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 83W (Tc)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5.2x5.75)
Package / Case
8-PowerLDFN

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