TSM190N08CZ

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Overview of TSM190N08CZ

Part NumberTSM190N08CZ
ManufacturerTaiwan Semiconductor
Description75V, 190A, SINGLE N-CHANNEL POWE
DatasheetsDownload TSM190N08CZ Datasheet PDFPDF Icon
Price for TSM190N08CZ

Specification of TSM190N08CZ

Status
Active
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25C
17A (Ta), 190A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 90A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
8600 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 250W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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