TSM250NB06CV RGG

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Overview of TSM250NB06CV RGG

Part NumberTSM250NB06CV RGG
ManufacturerTaiwan Semiconductor
Description60V, 28A, SINGLE N-CHANNEL POWER
DatasheetsDownload TSM250NB06CV RGG Datasheet PDFPDF Icon
Price for TSM250NB06CV RGG

Specification of TSM250NB06CV RGG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
6A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7V, 10V
Rds On (Max) @ Id, Vgs
25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1440 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
1.9W (Ta), 42W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (3.15x3.1)
Package / Case
8-PowerWDFN

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