TSM250NB06DCR RLG

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Overview of TSM250NB06DCR RLG

Part NumberTSM250NB06DCR RLG
ManufacturerTaiwan Semiconductor
DescriptionDUAL N-CHANNEL POWER MOSFET 60V,
DatasheetsDownload TSM250NB06DCR RLG Datasheet PDFPDF Icon
Price for TSM250NB06DCR RLG

Specification of TSM250NB06DCR RLG

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
7A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1461pF @ 30V
Power - Max
2W (Ta), 48W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)

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