TSM300NB06LDCR

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Overview of TSM300NB06LDCR

Part NumberTSM300NB06LDCR
ManufacturerTaiwan Semiconductor
Description60V, 24A, DUAL N-CHANNEL POWER
DatasheetsDownload TSM300NB06LDCR Datasheet PDFPDF Icon
Price for TSM300NB06LDCR

Specification of TSM300NB06LDCR

Status
Active
Package
Tape & Reel (TR)
Supplier
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25C
5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs
30mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
966pF @ 30V
Power - Max
2W (Ta), 40W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFNU (5x6)

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