TSM4N80CZ C0G

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Overview of TSM4N80CZ C0G

Part NumberTSM4N80CZ C0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 800V 4A TO220
DatasheetsDownload TSM4N80CZ C0G Datasheet PDFPDF Icon
Price for TSM4N80CZ C0G

Specification of TSM4N80CZ C0G

Status
Obsolete
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
955 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38.7W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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