TSM5055DCR

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Overview of TSM5055DCR

Part NumberTSM5055DCR
ManufacturerTaiwan Semiconductor
Description30V, 107A, DUAL N-CHANNEL POWER
DatasheetsDownload TSM5055DCR Datasheet PDFPDF Icon
Price for TSM5055DCR

Specification of TSM5055DCR

Status
Active
Package
Tape & Reel (TR)
Supplier
Taiwan Semiconductor Corporation
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25C
10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs
11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.3nC @ 10V, 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
555pF @ 15V, 2550pF @ 15V
Power - Max
2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
8-PDFN (5x6)

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