TSM5ND50CI

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Overview of TSM5ND50CI

Part NumberTSM5ND50CI
ManufacturerTaiwan Semiconductor
Description500V, 5A, SINGLE N-CHANNEL POWE
DatasheetsDownload TSM5ND50CI Datasheet PDFPDF Icon
Price for TSM5ND50CI

Specification of TSM5ND50CI

Status
Active
Package
Tube
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25C
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250A
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 10 V
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
603 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3

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