TSM650N15CR

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Overview of TSM650N15CR

Part NumberTSM650N15CR
ManufacturerTaiwan Semiconductor
Description150V, 24A, SINGLE N-CHANNEL POWE
DatasheetsDownload TSM650N15CR Datasheet PDFPDF Icon
Price for TSM650N15CR

Specification of TSM650N15CR

Status
Active
Package
Tape & Reel (TR)
Supplier
Taiwan Semiconductor Corporation
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25C
4A (Ta), 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
65mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
36 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1829 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
2.6W (Ta), 96W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN

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