TW060N120C,S1F

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Overview of TW060N120C,S1F

Part NumberTW060N120C,S1F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionG3 1200V SIC-MOSFET TO-247 60MO
DatasheetsDownload TW060N120C,S1F Datasheet PDFPDF Icon
Price for TW060N120C,S1F

Specification of TW060N120C,S1F

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
78mOhm @ 18A, 18V
Vgs(th) (Max) @ Id
5V @ 4.2mA
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1530 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
170W (Tc)
Operating Temperature
175C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

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