TW070J120B,S1Q

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Overview of TW070J120B,S1Q

Part NumberTW070J120B,S1Q
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionSICFET N-CH 1200V 36A TO3P
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Price for TW070J120B,S1Q

Specification of TW070J120B,S1Q

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
90mOhm @ 18A, 20V
Vgs(th) (Max) @ Id
5.8V @ 20mA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 20 V
Vgs (Max)
25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1680 pF @ 800 V
FET Feature
Standard
Power Dissipation (Max)
272W (Tc)
Operating Temperature
-55C ~ 175C
Mounting Type
Through Hole
Supplier Device Package
TO-3P(N)
Package / Case
TO-3P-3, SC-65-3

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