TW107N65C,S1F

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

Overview of TW107N65C,S1F

Part NumberTW107N65C,S1F
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionG3 650V SIC-MOSFET TO-247 107MO
DatasheetsDownload TW107N65C,S1F Datasheet PDFPDF Icon
Price for TW107N65C,S1F

Specification of TW107N65C,S1F

Status
Active
Package
Tube
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25C
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
145mOhm @ 10A, 18V
Vgs(th) (Max) @ Id
5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 18 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
76W (Tc)
Operating Temperature
175C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3

Parts Information

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)

Contact Information

Fields marked with a * are required

Introduction

TW107N65C,S1F is in Stock, Find TW107N65C,S1F electronics components stock, Technical information, Inventory and Price here at Ic-find.com, send us an inquiry for TW107N65C,S1F to get the price and lead time now! We can offer fast shipment via DHL/FedEx/UPS.

Email us: [email protected] or RFQ TW107N65C,S1F Online.

FAQ

  • 1 How to place an order?[Click to Expand]

  • 2 What payment methods do you offer?[Click to Expand]

  • 3 How do you handle the shipment?[Click to Expand]

  • 4 I can't find a part on IC-find, what should I do?[Click to Expand]

Recommend Products

Your RFQ Preview

Fields marked with a * are required
Part Number*ManufacturerDescriptionQuantity*Target Unit Price(USD)
Continue Shopping
Go RFQ Page