UPA1902TE-T1-AT

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Overview of UPA1902TE-T1-AT

Part NumberUPA1902TE-T1-AT
ManufacturerRenesas Electronics America
DescriptionUPA1902TE-T1-AT - N-CHANNEL MOS
DatasheetsDownload UPA1902TE-T1-AT Datasheet PDFPDF Icon
Price for UPA1902TE-T1-AT

Specification of UPA1902TE-T1-AT

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
22mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
780 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
200mW (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
SC-95
Package / Case
SC-95

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