UPA2706GR-E2-AT

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Overview of UPA2706GR-E2-AT

Part NumberUPA2706GR-E2-AT
ManufacturerRenesas Electronics America
DescriptionUPA2706GR-E2-AT - MOS FIELD EFFE
Price for UPA2706GR-E2-AT

Specification of UPA2706GR-E2-AT

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
15mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
7.1 nC @ 5 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 15W (Tc)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.173", 4.40mm Width)

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