UPA2765T1A-E2-AY

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Overview of UPA2765T1A-E2-AY

Part NumberUPA2765T1A-E2-AY
ManufacturerRenesas Electronics America
DescriptionMOSFET N-CH 30V 100A 8HVSON
DatasheetsDownload UPA2765T1A-E2-AY Datasheet PDFPDF Icon
Price for UPA2765T1A-E2-AY

Specification of UPA2765T1A-E2-AY

Status
Last Time Buy
Package
Tape & Reel (TR)
Supplier
Renesas Electronics America Inc
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.9mOhm @ 32A, 4.5V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
152 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6550 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta), 83W (Tc)
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-HVSON (5x5.4)
Package / Case
8-PowerVDFN

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