UPA2826T1S-E2-AT

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Overview of UPA2826T1S-E2-AT

Part NumberUPA2826T1S-E2-AT
ManufacturerRenesas Electronics America
Description8P HWSON
DatasheetsDownload UPA2826T1S-E2-AT Datasheet PDFPDF Icon
Price for UPA2826T1S-E2-AT

Specification of UPA2826T1S-E2-AT

Status
Active
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Renesas Electronics America Inc
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25C
27A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 8V
Rds On (Max) @ Id, Vgs
4.3mOhm @ 13.5A, 8V
Vgs(th) (Max) @ Id
1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
37 nC @ 4 V
Vgs (Max)
12V
Input Capacitance (Ciss) (Max) @ Vds
3610 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
20W (Ta)
Operating Temperature
150C
Mounting Type
Surface Mount
Supplier Device Package
8-HWSON (3.3x3.3)
Package / Case
8-PowerWDFN

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