VP0106N3-G

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Overview of VP0106N3-G

Part NumberVP0106N3-G
ManufacturerMicrochip Technology
DescriptionMOSFET P-CH 60V 250MA TO92-3
DatasheetsDownload VP0106N3-G Datasheet PDFPDF Icon
Price for VP0106N3-G

Specification of VP0106N3-G

Status
Active
Package
Bag
Supplier
Microchip Technology
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
250mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
8Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

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