VP0808L-G

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Overview of VP0808L-G

Part NumberVP0808L-G
ManufacturerMicrochip Technology
DescriptionMOSFET P-CH 80V 280MA TO92-3
DatasheetsDownload VP0808L-G Datasheet PDFPDF Icon
Price for VP0808L-G

Specification of VP0808L-G

Status
Active
Package
Bag
Supplier
Microchip Technology
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25C
280mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
30V
Input Capacitance (Ciss) (Max) @ Vds
150 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA)

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