VP2206N2

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Overview of VP2206N2

Part NumberVP2206N2
ManufacturerMicrochip Technology
DescriptionMOSFET P-CH 60V 750MA TO39
DatasheetsDownload VP2206N2 Datasheet PDFPDF Icon
Price for VP2206N2

Specification of VP2206N2

Status
Active
Package
Bag
Supplier
Microchip Technology
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
750mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
900mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
360mW (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AD, TO-39-3 Metal Can

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