VQ1006P-2

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Overview of VQ1006P-2

Part NumberVQ1006P-2
ManufacturerVishay / Siliconix
DescriptionMOSFET 4N-CH 90V 0.4A 14DIP
DatasheetsDownload VQ1006P-2 Datasheet PDFPDF Icon
Price for VQ1006P-2

Specification of VQ1006P-2

Status
Obsolete
Package
Tube
Supplier
Vishay Siliconix
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
90V
Current - Continuous Drain (Id) @ 25C
400mA
Rds On (Max) @ Id, Vgs
4.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
60pF @ 25V
Power - Max
2W
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
14-DIP

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