VS-3C12ET07T-M3

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Overview of VS-3C12ET07T-M3

Part NumberVS-3C12ET07T-M3
ManufacturerVishay / Semiconductor - Diodes Division
Description650 V POWER SIC GEN 3 MERGED PIN
DatasheetsDownload VS-3C12ET07T-M3 Datasheet PDFPDF Icon
Price for VS-3C12ET07T-M3

Specification of VS-3C12ET07T-M3

Status
Active
Package
Tube
Supplier
Vishay General Semiconductor - Diodes Division
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
12A
Voltage - Forward (Vf) (Max) @ If
1.5 V @ 12 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
65 A @ 650 V
Capacitance @ Vr, F
535pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-220-2
Supplier Device Package
TO-220AC
Operating Temperature - Junction
-55C ~ 175C

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