VS-GT100TP120N

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Overview of VS-GT100TP120N

Part NumberVS-GT100TP120N
ManufacturerVishay / Semiconductor - Diodes Division
DescriptionIGBT MOD 1200V 180A INT-A-PAK
DatasheetsDownload VS-GT100TP120N Datasheet PDFPDF Icon
Price for VS-GT100TP120N

Specification of VS-GT100TP120N

Status
Obsolete
Package
Bulk
Supplier
Vishay General Semiconductor - Diodes Division
IGBT Type
Trench
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
180 A
Power - Max
652 W
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 100A
Current - Collector Cutoff (Max)
5 mA
Input Capacitance (Cies) @ Vce
12.8 nF @ 30 V
Input
Standard
NTC Thermistor
No
Operating Temperature
175C (TJ)
Mounting Type
Chassis Mount
Package / Case
INT-A-PAK (3 + 4)
Supplier Device Package
INT-A-PAK

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