VWM200-01P

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Overview of VWM200-01P

Part NumberVWM200-01P
ManufacturerLittelfuse
DescriptionMOSFET 6N-CH 100V 210A V2
DatasheetsDownload VWM200-01P Datasheet PDFPDF Icon
Price for VWM200-01P

Specification of VWM200-01P

Status
Obsolete
Package
Box
Supplier
IXYS
Technology
MOSFET (Metal Oxide)
Configuration
6 N-Channel (3-Phase Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25C
210A
Rds On (Max) @ Id, Vgs
5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
-
Operating Temperature
-40C ~ 175C (TJ)
Mounting Type
Chassis Mount
Package / Case
V2-PAK
Supplier Device Package
V2-PAK

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