WNSC201200WQ

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Overview of WNSC201200WQ

Part NumberWNSC201200WQ
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionDIODE SIL CARB 1.2KV 20A TO247-2
DatasheetsDownload WNSC201200WQ Datasheet PDFPDF Icon
Price for WNSC201200WQ

Specification of WNSC201200WQ

Status
Last Time Buy
Package
Tube
Supplier
WeEn Semiconductors
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
1200 V
Current - Average Rectified (Io)
20A
Voltage - Forward (Vf) (Max) @ If
1.6 V @ 20 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
220 A @ 1200 V
Capacitance @ Vr, F
1020pF @ 1V, 1MHz
Mounting Type
Through Hole
Package / Case
TO-247-2
Supplier Device Package
TO-247-2
Operating Temperature - Junction
175C (Max)

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