WNSCM80120RQ

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Overview of WNSCM80120RQ

Part NumberWNSCM80120RQ
ManufacturerWeEn Semiconductors Co., Ltd
DescriptionWNSCM80120R/TO247-4L/STANDARD MA
Price for WNSCM80120RQ

Specification of WNSCM80120RQ

Status
Active
Package
Bulk
Supplier
WeEn Semiconductors
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25C
45A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 20 V
Vgs (Max)
+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1350 pF @ 1000 V
FET Feature
-
Power Dissipation (Max)
270W (Ta)
Operating Temperature
-55C ~ 175C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4

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