XPH2R106NC,L1XHQ

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Overview of XPH2R106NC,L1XHQ

Part NumberXPH2R106NC,L1XHQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 60V 110A 8SOP
DatasheetsDownload XPH2R106NC,L1XHQ Datasheet PDFPDF Icon
Price for XPH2R106NC,L1XHQ

Specification of XPH2R106NC,L1XHQ

Status
Active
Series
Automotive, AEC-Q101, U-MOSVIII-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
110A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
2.1mOhm @ 55A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
104 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6900 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
960mW (Ta), 170W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5)
Package / Case
8-SOIC (0.197", 5.00mm Width)

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