XPH3R114MC,L1XHQ

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Overview of XPH3R114MC,L1XHQ

Part NumberXPH3R114MC,L1XHQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET P-CH 40V 100A 8SOP
DatasheetsDownload XPH3R114MC,L1XHQ Datasheet PDFPDF Icon
Price for XPH3R114MC,L1XHQ

Specification of XPH3R114MC,L1XHQ

Status
Active
Series
U-MOSVI
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
100A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds
9500 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
960mW (Ta), 170W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
8-SOP Advance (5x5)
Package / Case
8-PowerVDFN

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