XPN7R104NC,L1XHQ

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Overview of XPN7R104NC,L1XHQ

Part NumberXPN7R104NC,L1XHQ
ManufacturerToshiba Electronic Devices and Storage Corporation
DescriptionMOSFET N-CH 40V 20A 8TSON
DatasheetsDownload XPN7R104NC,L1XHQ Datasheet PDFPDF Icon
Price for XPN7R104NC,L1XHQ

Specification of XPN7R104NC,L1XHQ

Status
Active
Series
U-MOSIII
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
2.5V @ 200A
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
1290 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
840mW (Ta), 65W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance-WF (3.1x3.1)
Package / Case
8-PowerVDFN

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