XPQ1R004PB,LXHQ

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Overview of XPQ1R004PB,LXHQ

Part NumberXPQ1R004PB,LXHQ
ManufacturerToshiba Electronic Devices and Storage Corporation
Description40V U-MOS IX-H L-TOGL 1.0MOHM
Price for XPQ1R004PB,LXHQ

Specification of XPQ1R004PB,LXHQ

Status
Active
Series
Automotive, AEC-Q101, U-MOSIX-H
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
Supplier
Toshiba Semiconductor and Storage
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25C
200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3V @ 500A
Gate Charge (Qg) (Max) @ Vgs
84 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
6890 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
230W (Tc)
Operating Temperature
175C
Mounting Type
Surface Mount
Supplier Device Package
L-TOGL
Package / Case
8-PowerBSFN

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