ZXMN10B08E6QTA

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Overview of ZXMN10B08E6QTA

Part NumberZXMN10B08E6QTA
ManufacturerDiodes Incorporated
DescriptionMOSFET BVDSS: 61V~100V SOT26 T&R
Price for ZXMN10B08E6QTA

Specification of ZXMN10B08E6QTA

Status
Active
Package
Tape & Reel (TR)
Supplier
Diodes Incorporated
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.3V, 10V
Rds On (Max) @ Id, Vgs
230mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id
3V @ 250A
Gate Charge (Qg) (Max) @ Vgs
9.2 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
497 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
1.1W (Ta)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-26
Package / Case
SOT-23-6

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