2N6760TXV

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Overview of 2N6760TXV

Part Number2N6760TXV
ManufacturerHarris Corporation
Description5.5A, 400V, 1OHM, N-CHANNEL
DatasheetsDownload 2N6760TXV Datasheet PDFPDF Icon
Price for 2N6760TXV

Specification of 2N6760TXV

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
75W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3
Package / Case
TO-204AA

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