2N6764T1

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Overview of 2N6764T1

Part Number2N6764T1
ManufacturerMicrosemi
DescriptionMOSFET N-CH 100V 38A TO3
DatasheetsDownload 2N6764T1 Datasheet PDFPDF Icon
Price for 2N6764T1

Specification of 2N6764T1

Status
Active
Package
Bulk
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
65mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
125 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
4W (Ta), 150W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3
Package / Case
TO-204AE

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