2N6786

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Overview of 2N6786

Part Number2N6786
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
DatasheetsDownload 2N6786 Datasheet PDFPDF Icon
Price for 2N6786

Specification of 2N6786

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25C
1.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.7Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4V @ 250A
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
15W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-205AF (TO-39)
Package / Case
TO-205AF Metal Can

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