2N6796

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Overview of 2N6796

Part Number2N6796
ManufacturerMicrosemi
DescriptionMOSFET N-CH 100V 8A TO39
Price for 2N6796

Specification of 2N6796

Status
Obsolete
Package
Bulk
Supplier
Microchip Technology
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
4V @ 250mA
Gate Charge (Qg) (Max) @ Vgs
6.34 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
-
FET Feature
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
Operating Temperature
-55C ~ 150C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-39
Package / Case
TO-205AF Metal Can

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