2SJ606-ZK-E1-AY

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Overview of 2SJ606-ZK-E1-AY

Part Number2SJ606-ZK-E1-AY
ManufacturerNEC Corporation
DescriptionP-CHANNEL SWITCHING POWER MOSFET
DatasheetsDownload 2SJ606-ZK-E1-AY Datasheet PDFPDF Icon
Price for 2SJ606-ZK-E1-AY

Specification of 2SJ606-ZK-E1-AY

Status
Active
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
83A
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 42A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
4800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
120W
Operating Temperature
150C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-220SMD
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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