2SJ635-TL-E

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Overview of 2SJ635-TL-E

Part Number2SJ635-TL-E
Manufactureronsemi
Description2SJ635 - P-CHANNEL SILICON MOSFE
Price for 2SJ635-TL-E

Specification of 2SJ635-TL-E

Status
Obsolete
Package
Bulk
Supplier
Rochester Electronics, LLC
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
60mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
20V
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
1W (Ta), 30W (Tc)
Operating Temperature
150C
Mounting Type
Through Hole
Supplier Device Package
TP
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA

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